| PART |
Description |
Maker |
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| ETC2732Q ETC2745Q |
(ETC2732 - ETC2755) 32K-Bit CMOS UV EPROM
|
Thomson
|
| FM27C256 FM27C256X150 FM27C256X90 |
262,144-Bit (32K x 8)High Performance CMOS EPROM
From old datasheet system
|
Fairchild Semiconductor
|
| 24WC32 CAT24WC32 CAT24WC64 |
32K/64K-Bit I2C Serial CMOS E2PROM
32K/64K-BitI2CSerialCMOSE2PROM
|
CatalystSemiconductor
Catalyst Semiconductor
|
| CAT25C32PSE-1.8TE13 CAT25C32VSI-1.8TE13 CAT25C32Y1 |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS
|
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
BCD Semiconductor Manufacturing, Ltd.
|
| HN27C256A-12 |
32K x 8 CMOS EPROM Memory
|
Hitachi Semiconductor
|
| 27C256 |
256K (32K X 8) CMOS EPROM
|
Microchip Technology Inc
|
| NM27C256NE100 |
262,144-Bit (32K x 8) High Performance CMOS EPROM 262,144位（32K的8）高性能CMOS存储
|
Fairchild Semiconductor, Corp.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| 27C256TRPDI-12 27C256TRPDI-15 27C256TRPDI-20 27C25 |
256K (32K x 8-Bit) OTP EPROM
|
Maxwell Technologies
|
